Exploring room temperature spin transport under band gap opening in bilayer graphene

Christopher R Anderson; Noel Natera-Cordero; Victor H Guarochico-Moreira; Irina V Grigorieva; Ivan J Vera-Marun

doi:10.1038/s41598-023-36800-2

Exploring room temperature spin transport under band gap opening in bilayer graphene

Sci Rep. 2023 Jun 26;13(1):10343. doi: 10.1038/s41598-023-36800-2.

Authors

Christopher R Anderson¹, Noel Natera-Cordero^{2

3}, Victor H Guarochico-Moreira^{2

4

5}, Irina V Grigorieva^{2

6}, Ivan J Vera-Marun^{2

6}

Affiliations

¹ Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK. chris.anderson@manchester.ac.uk.
² Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
³ Consejo Nacional de Ciencia y Tecnología (CONACyT), Mexico City, Mexico.
⁴ Facultad de Ciencias Naturales y Matemáticas, Escuela Superior Politécnica del Litoral, ESPOL, Campus Gustavo Galindo, Km. 30.5 Vía Perimetral, P.O. Box 09-01-5863, 090902, Guayaquil, Ecuador.
⁵ Center of Nanotechnology Research and Development (CIDNA), Escuela Superior Politécnica del Litoral, ESPOL, Campus Gustavo Galindo Km 30.5 Vía Perimetral, Guayaquil, Ecuador.
⁶ National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.

Abstract

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.