Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

Olli E Setälä; Kexun Chen; Toni P Pasanen; Xiaolong Liu; Behrad Radfar; Ville Vähänissi; Hele Savin

doi:10.1021/acsphotonics.2c01984

Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

ACS Photonics. 2023 May 22;10(6):1735-1741. doi: 10.1021/acsphotonics.2c01984. eCollection 2023 Jun 21.

Authors

Olli E Setälä¹, Kexun Chen¹, Toni P Pasanen¹, Xiaolong Liu¹, Behrad Radfar¹, Ville Vähänissi¹, Hele Savin¹

Affiliation

¹ Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.

Abstract

Detection of UV light has traditionally been a major challenge for Si photodiodes due to reflectance losses and junction recombination. Here we overcome these problems by combining a nanostructured surface with an optimized implanted junction and compare the obtained performance to state-of-the-art commercial counterparts. We achieve a significant improvement in responsivity, reaching near ideal values at wavelengths all the way from 200 to 1000 nm. Dark current, detectivity, and rise time are in turn shown to be on a similar level. The presented detector design allows a highly sensitive operation over a wide wavelength range without making major compromises regarding the simplicity of the fabrication or other figures of merit relevant to photodiodes.