In today's information age, high performance nonvolatile memory devices have become extremely important. Despite their potential, existing devices suffer from limitations, such as low operation speed, low memory capacity, short retention time, and a complex preparation process. To overcome these limitations, advanced memory designs are required to improve speed, memory capacity, and retention time and reduce the number of preparation steps. Here, we present a nonvolatile floating-gate-like memory device based on a transistor that uses the polarization effect of ferroelectric material PZT (Pb[Zr0.2Ti0.8]O3) for regulating tunneling electrons for charging and discharging the MoS2 channel layer. The transistor is defined as a polarized tunneling transistor (PTT) and does not require a tunnel layer or a floating-gate layer. The PTT demonstrates an ultrafast programming/erasing speed of 25/20 ns and a response time of 120/105 ns, which is comparable to the ultrafast flash memories based on van der Waals heterostructures. Additionally, the PTT has a high extinction ratio of 104, a long retention time of 10 years, and a simple fabrication process. Our research provides future guidelines for the development of the next generation of ultrafast nonvolatile memory devices.
Keywords: floating-gate transistor; nonvolatile memory; polarized tunneling transistor; two-dimensional material; ultrafast memory.