Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer

Meiwen Chen; Shuxian Lv; Boping Wang; Pengfei Jiang; Yuanxiang Chen; Yaxin Ding; Yuan Wang; Yuting Chen; Yan Wang

doi:10.3390/nano13101608

Improved Endurance of Ferroelectric Hf_0.5Zr_0.5O₂ Using Laminated-Structure Interlayer

Nanomaterials (Basel). 2023 May 11;13(10):1608. doi: 10.3390/nano13101608.

Authors

Meiwen Chen^{1

2}, Shuxian Lv^{1

2}, Boping Wang^{1

2}, Pengfei Jiang^{1

2}, Yuanxiang Chen^{1

2}, Yaxin Ding^{1

2}, Yuan Wang^{1

2}, Yuting Chen^{1

2}, Yan Wang^{1

2}

Affiliations

¹ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
² University of Chinese Academy of Sciences, Beijing 100049, China.

Abstract

In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf_0.5Zr_0.5O₂ thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle of the HZO film. Although small remanent polarization reduction was observed in the capacitor with a laminated structure, the endurance characteristic was improved by two orders of magnitude (from 10⁶ to 10⁸ cycles). Moreover, the leakage current of the TiN/HZO/TiN capacitor with the laminated-structure interlayer was reduced by one order of magnitude. The reliability enhancement was proved by the Time-Dependent Dielectric Breakdown (TDDB) test, and the optimization results were attributed to the migration inhibition and nonuniform distribution of oxygen vacancies. Without additional materials and a complicated process, the laminated-structure method provides a feasible strategy for improving HZO device reliability.

Keywords: ZrO2–HfO2; endurance; ferroelectrics; interlayer; laminated structure; oxygen vacancy; reliability.

Abstract

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