Pressure and strain engineering of the structural and electronic transitions in ReS2

Liang Ma; Dan Liu; Binbin Xiao; Yong Cao; Yicheng Wang; Yipeng Zhao

doi:10.1088/1361-648X/acd7b9

Pressure and strain engineering of the structural and electronic transitions in ReS₂

J Phys Condens Matter. 2023 Jun 12;35(36). doi: 10.1088/1361-648X/acd7b9.

Authors

Liang Ma¹, Dan Liu¹, Binbin Xiao¹, Yong Cao¹, Yicheng Wang¹, Yipeng Zhao¹

Affiliation

¹ College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, People's Republic of China.

PMID: 37216949
DOI: 10.1088/1361-648X/acd7b9

Abstract

The distinctive crystal structure and anisotropic electrical characteristics of rhenium disulfide (ReS₂) have garnered growing interest. Pressure and strain engineering has been used to modulate structural and electronic transition. Here, we present a comprehensive study on the high-pressure phase transition and strain tunable electronic properties of ReS₂. There occurs a structural transition from distorted-1T to distorted-1T' at 7.5 GPa. In addition, ReS₂has opposite piezoresistive effects along the two principle axes in the plane. This study shows that pressure and strain may be used to tune the characteristics of ReS₂for future optoelectronic applications.

Keywords: ReS2; bandgap; pressure; strain engineering.