Excitonic solar cells based on van der Waals heterojunctions of Janus III-VI chalcogenide monolayers

Jinghua Pan; Yu Wang; Danni Wang; Zelong Ma; Sicheng Jing; Wen Chen; Baoan Bian; Bin Liao

doi:10.1088/1361-6528/acd788

Excitonic solar cells based on van der Waals heterojunctions of Janus III-VI chalcogenide monolayers

Nanotechnology. 2023 Jun 6;34(34). doi: 10.1088/1361-6528/acd788.

Authors

Jinghua Pan¹, Yu Wang¹, Danni Wang¹, Zelong Ma¹, Sicheng Jing¹, Wen Chen¹, Baoan Bian¹, Bin Liao²

Affiliations

¹ School of Science, Jiangnan University, Wuxi 214122, People's Republic of China.
² College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China.

PMID: 37216924
DOI: 10.1088/1361-6528/acd788

Abstract

We construct the two-dimensional (2D) excitonic solar cells based on type II vdW heterojunctions of Janus III-VI chalcogenide monolayers and investigate the performance of the device using the first principle. The calculated solar energy absorbance of In₂SSe/GaInSe₂and In₂SeTe/GaInSe₂heterojunctions is the order of 10⁵cm^-1. The predicted photoelectric conversion efficiency of the In₂SeTe/GaInSe₂heterojunction can reach up to 24.5%, which compares favorably with other previously studied 2D heterojunctions. The excellent performance of In₂SeTe/GaInSe₂heterojunction originates from the fact that the built-in electric field at the interface of In₂SeTe/GaInSe₂promote the flow of the photogenerated electrons. The results suggest that 2D Janus Group-III chalcogenide heterojunction can be a good candidate for new optoelectronic nanodevices.

Keywords: Janus III–VI chalcogenide monolayers; excitonic solar cells; first-principle calculations; power conversion efficiency; van der Waals heterojunction.