Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films

ACS Appl Mater Interfaces. 2023 May 24;15(20):24606-24613. doi: 10.1021/acsami.3c03191. Epub 2023 May 15.

Abstract

We report the large-scale transfer process for monocrystalline CsPbBr3 thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr3 thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr3 and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm2, a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm2 V-1 s-1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr3 and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.

Keywords: large-scale transfer; monocrystalline perovskite film; photodetectors; photonic lasing; transistors.