Synergy of S-vacancy and heterostructure in BiOCl/Bi2S3-x boosting room-temperature NO2 sensing

Yongchao Yang; Junpeng Mao; Dongmin Yin; Tianyue Zhang; Chengli Liu; Weixun Hao; You Wang; Juanyuan Hao

doi:10.1016/j.jhazmat.2023.131591

Synergy of S-vacancy and heterostructure in BiOCl/Bi₂S_3-x boosting room-temperature NO₂ sensing

J Hazard Mater. 2023 Aug 5:455:131591. doi: 10.1016/j.jhazmat.2023.131591. Epub 2023 May 6.

Authors

Yongchao Yang¹, Junpeng Mao², Dongmin Yin², Tianyue Zhang², Chengli Liu³, Weixun Hao⁴, You Wang⁵, Juanyuan Hao⁶

Affiliations

¹ School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China; The 49th Research Institute of China Electronics Technology Group Corporation, Harbin 150028, China.
² School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
³ The 49th Research Institute of China Electronics Technology Group Corporation, Harbin 150028, China.
⁴ State Key Laboratory of Efficient and Clean Coal-fired Utility Boilers, Harbin Boiler Company Limited, Harbin 150046, China.
⁵ School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China. Electronic address: y-wang@hit.edu.cn.
⁶ School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China. Electronic address: jyhao@hit.edu.cn.

PMID: 37172379
DOI: 10.1016/j.jhazmat.2023.131591

Abstract

The special physicochemical properties of Bi₂S₃ nanomaterial endow it to be exceptional NO₂ sensing properties. However, sensors based on pure Bi₂S₃ cannot detect trace NO₂ at room temperature effectively due to the scanty active sites and poor charge transfer efficiency. Herein, vacancy defect and heterostructure engineering are rationally integrated to explore BiOCl/Bi₂S_3-x heterostructure with rich S vacancies to enhance NO₂ sensing performance. The optimized sensor based on S-vacancy-rich BiOCl/Bi₂S_3-x heterostructure exhibited a high response value (R_g/R_a = 29.1) to 1 ppm NO₂ at room temperature, which was about 17 times compared to the pristine Bi₂S₃. Meanwhile, the BiOCl/Bi₂S_3-x sensor also exhibited a short response time (36 s) towards 1 ppm NO₂ and a low theoretical detection limit (2 ppb). The superior response value of S-vacancy-rich BiOCl/Bi₂S_3-x heterostructures was ascribed to the improved electron migration at the heterointerface and the additional exposed active sites caused by the S vacancies in Bi₂S_3-x. Additionally, the sensors based on S-vacancy-rich BiOCl/Bi₂S_3-x heterostructures showed good long-term stability, outstanding selectivity, and good flexibility. This study offers an effective method for synergistically engineering defect and heterostructure to enhance gas sensing properties at room temperature.

Keywords: BiOCl/Bi(2)S(3−x) heterostructure; NO(2) detection; Room temperature; S-vacancy.