To exploit the promising properties of semiconductor nanowires and ensure the uniformity required to achieve device integration, their position on the growth substrate must be controlled. This work demonstrates the direct patterning of a SiO2/Si substrate using focused ion beam (FIB) patterning to control self-catalyzed GaAsSb nanowire growth in molecular beam epitaxy (MBE). Besides position control, FIB patterning parameters influence nanowire yield, composition and structure. Total ion dose per hole is found to be the most important parameter. Yield of single nanowires ranges from ≈34% to ≈83%, with larger holes dominated by multiple nanowires per hole. Areas exposed to low ion beam doses are selectively etched by routine pre-MBE HF cleaning, enabling patterning and nanowire nucleation with minimal damage to the Si substrate. The optical and electronic properties of nanowires are found to depend on the ion dose used during patterning, indicating the potential for FIB patterning to tune nanowire properties. These findings demonstrate the possibility for a FIB lithography protocol which could provide a rapid and direct patterning process for flexible controlled nanowire growth.
Keywords: FIB; GaAsSb; nanowires; patterning; semiconducting nanostructures.
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