IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

Wenli Jiang; Wei Cheng; Menglin Qiu; Shuai Wu; Xiao Ouyang; Lin Chen; Pan Pang; Minju Ying; Bin Liao

doi:10.3390/ma16072935

IBIL Measurement and Optical Simulation of the D_I Center in 4H-SiC

Materials (Basel). 2023 Apr 6;16(7):2935. doi: 10.3390/ma16072935.

Authors

Wenli Jiang¹, Wei Cheng^{1

2}, Menglin Qiu^{1

3}, Shuai Wu¹, Xiao Ouyang¹, Lin Chen¹, Pan Pang³, Minju Ying^{1

3}, Bin Liao^{1

3}

Affiliations

¹ Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
² Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
³ Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China.

Abstract

In this paper, D_I defects are studied via experiments and calculations. The 2 MeV H⁺ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H⁺ fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the D_I optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of D_I defects. The optical transition of the defect Si_C(C_Si)₂ from q = 0 to q = 1 is considered the experimental value of the D_I defect center.

Keywords: DI defect; IBIL; ab initio; in-situ measurement; luminescence.

Abstract

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