To solve the electromigration problem of micro-electronic connection solder joints, an ideal electromigration tester was designed, and the thickness of the intermetallic compounds (IMCs), average void diameter, grain orientation, failure, shear strength, and fracture path of Sn2.5Ag0.7Cu0.1RE0.05Ni-GNSs/Cu solder joints under constant-temperature electromigration were studied. The results indicate that the solder joints show evidence of typical electromigration polarity in the asymmetric growth of interfacial IMCs on the anode and cathode sides under the conditions of a current density ≥7 × 103 A/cm2 and an included angle between the c-axis of the β-Sn grains and the current direction θ ≤ 53.2°. The anode-side interfacial IMC is dominated by a Cu6Sn5 phase with a gradually increasing thickness, forming a Cu3Sn phase and showing evidence of microcracks. The Cu6Sn5 phase of the cathode-side interfacial IMC is gradually completely dissolved, and the growth of the Cu3Sn phase is accompanied by the formation of Kirkendall voids. The anisotropic diffusion of Cu atoms in the β-Sn of the micro-solder joints causes increased solder joint resistance and reduced shear strength. The shear fracture path of the solder joints moves from the cathode side near the IMC solder seam to the Cu3Sn interface. The shear fracture mechanism changes from ductile transgranular fracture dominated by β-Sn dimples to brittle fracture dominated by interfacial IMC cleavage and slip steps.
Keywords: crack; electrical properties; electromigration; grain orientation; interfacial IMC; lead−free solder joint; mechanical properties.