Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Nanoscale Adv. 2023 Mar 20;5(7):2119. doi: 10.1039/d3na90031b. eCollection 2023 Mar 28.

Authors

Florian Pantle¹, Fabian Becker¹, Max Kraut¹, Simon Wörle¹, Theresa Hoffmann¹, Sabrina Artmeier¹, Martin Stutzmann¹

Affiliation

¹ Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany florian.pantle@wsi.tum.de stutz@wsi.tum.de.

Abstract

[This corrects the article DOI: 10.1039/D1NA00221J.].

This journal is © The Royal Society of Chemistry.

Publication types

Published Erratum