On-site detection of chemical warfare agents (CWAs) can be performed by various analytical techniques. Devices using well-established techniques such as ion mobility spectrometry, flame photometry, infrared and Raman spectroscopy or mass spectrometry (usually combined with gas chromatography) are quite complex and expensive to purchase and operate. For this reason, other solutions based on analytical techniques well suited to portable devices are still being sought. Analyzers based on simple semiconductor sensors may be a potential alternative to the currently used CWA field detectors. In sensors of this type, the conductivity of the semiconductor layer changes upon interaction with the analyte. Metal oxides (both in the form of polycrystalline powders and various nanostructures), organic semiconductors, carbon nanostructures, silicon and various composites that are a combination of these materials are used as a semiconductor material. The selectivity of a single oxide sensor can be adjusted to specific analytes within certain limits by using the appropriate semiconductor material and sensitizers. This review presents the current state of knowledge and achievements in the field of semiconductor sensors for CWA detection. The article describes the principles of operation of semiconductor sensors, discusses individual solutions used for CWA detection present in the scientific literature and makes a critical comparison of them. The prospects for the development and practical application of this analytical technique in CWA field analysis are also discussed.
Keywords: CWA; MOS sensor; chemiresistor; field effect semiconductor sensor.