A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

Dibyendu Chowdhury; Bishnu Prasad De; Bhargav Appasani; Navaneet Kumar Singh; Rajib Kar; Durbadal Mandal; Nicu Bizon; Phatiphat Thounthong

doi:10.3390/s23062953

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

Sensors (Basel). 2023 Mar 8;23(6):2953. doi: 10.3390/s23062953.

Authors

Dibyendu Chowdhury¹, Bishnu Prasad De², Bhargav Appasani², Navaneet Kumar Singh^{3

4}, Rajib Kar⁴, Durbadal Mandal⁴, Nicu Bizon^{5

6

7}, Phatiphat Thounthong^{8

9}

Affiliations

¹ Department of ECE, Haldia Institute of Technology, Haldia 721657, India.
² School of Electronics Engineering, KIIT University, Bhubaneswar 751024, India.
³ University College of Engineering and Technology (UCET), Vinoba Bhave University (VBU), Hazaribag 825301, India.
⁴ Department of ECE, NIT Durgapur, Durgapur 713209, India.
⁵ Faculty of Electronics, Communication and Computers, University of Pitesti, 110040 Pitesti, Romania.
⁶ Doctoral School, University Politehnica of Bucharest, 060042 Bucharest, Romania.
⁷ ICSI Energy, National Research and Development Institute for Cryogenic and Isotopic Technologies, 240050 Ramnicu Valcea, Romania.
⁸ Renewable Energy Research Centre (RERC), Department of Teacher Training in Electrical Engineering, Faculty of Technical Education, King Mongkut's University of Technology North Bangkok, Bangkok 10800, Thailand.
⁹ Group of Research in Electrical Engineering of Nancy (GREEN), University of Lorraine-GREEN, 54000 Nancy, France.

Abstract

In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔV_th) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The I_on/I_off ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.

Keywords: DG MOSFET; GSDG MOSFET; biomolecules; biosensor; dielectric modulation; sensitivity; threshold voltage.

MeSH terms

Biosensing Techniques* / methods
Electricity
Semiconductors
Transistors, Electronic*

Grants and funding

N42A640328/National Research Council of Thailand