The quantum dot light-emitting diode (QLED) represents one of the strongest display technologies and has unique advantages like a shallow emission spectrum and superior performance based on the cumulative studies of state-of-the-art quantum dot (QD) synthesis and interfacial engineering. However, research on managing the device's light extraction has been lacking compared to the conventional LED field. Moreover, relevant studies on top-emitting QLEDs (TE-QLEDs) have been severely lacking compared to bottom-emitting QLEDs (BE-QLEDs). This paper demonstrates a novel light extraction structure called the randomly disassembled nanostructure (RaDiNa). The RaDiNa is formed by detaching polydimethylsiloxane (PDMS) film from a ZnO nanorod (ZnO NR) layer and laying it on top of the TE-QLED. The RaDiNa-attached TE-QLED shows significantly widened angular-dependent electroluminescence (EL) intensities over the pristine TE-QLED, confirming the effective light extraction capability of the RaDiNa layer. Consequently, the optimized RaDiNa-attached TE-QLED achieves enhanced external quantum efficiency (EQE) over the reference device by 60%. For systematic analyses, current-voltage-luminance (J-V-L) characteristics are investigated using scanning electron microscopy (SEM) and optical simulation based on COMSOL Multiphysics. It is believed that this study's results provide essential information for the commercialization of TE-QLEDs.
Keywords: ZnO nanorods; light extraction; outcoupling; quantum dot light emitting diodes; top emitting.
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