Thickness-Dependent Topological Hall Effect in 2D Cr5 Si3 Nanosheets with Noncollinear Magnetic Phase

Bailing Li; Hongmei Zhang; Quanyang Tao; Xiaohua Shen; Ziwei Huang; Kun He; Chen Yi; Xu Li; Liqiang Zhang; Zucheng Zhang; Jialing Liu; Jingmei Tang; Yucheng Zhou; Di Wang; Xiangdong Yang; Bei Zhao; Ruixia Wu; Jia Li; Bo Li; Xidong Duan

doi:10.1002/adma.202210755

Thickness-Dependent Topological Hall Effect in 2D Cr₅ Si₃ Nanosheets with Noncollinear Magnetic Phase

Adv Mater. 2023 Apr;35(16):e2210755. doi: 10.1002/adma.202210755. Epub 2023 Mar 12.

Authors

Bailing Li¹, Hongmei Zhang¹, Quanyang Tao², Xiaohua Shen¹, Ziwei Huang¹, Kun He^{2

3}, Chen Yi^{2

3}, Xu Li², Liqiang Zhang¹, Zucheng Zhang¹, Jialing Liu¹, Jingmei Tang¹, Yucheng Zhou¹, Di Wang¹, Xiangdong Yang⁴, Bei Zhao⁵, Ruixia Wu², Jia Li¹, Bo Li^{3

6}, Xidong Duan¹

Affiliations

¹ Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
² School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.
³ Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China.
⁴ Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China.
⁵ School of Physics, Southeast University, Nanjing, 211189, P. R. China.
⁶ Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China.

PMID: 36719342
DOI: 10.1002/adma.202210755

Abstract

Antiferromagnets with noncollinear spin order are expected to exhibit unconventional electromagnetic response, such as spin Hall effects, chiral abnormal, quantum Hall effect, and topological Hall effect. Here, 2D thickness-controlled and high-quality Cr₅ Si₃ nanosheets that are compatible with the complementary metal-oxide-semiconductor technology are synthesized by chemical vapor deposition method. The angular dependence of electromagnetic transport properties of Cr₅ Si₃ nanosheets is investigated using a physical property measurement system, and an obvious topological Hall effect (THE) appears at a large tilted magnetic field, which results from the noncollinear magnetic structure of the Cr₅ Si₃ nanosheet. The Cr₅ Si₃ nanosheets exhibit distinct thickness-dependent perpendicular magnetic anisotropy (PMA), and the THE only emerges in the specific thickness range with moderate PMA. This work provides opportunities for exploring fundamental spin-related physical mechanisms of noncollinear antiferromagnet in ultrathin limit.

Keywords: 2D nonlayered materials; complementary metal-oxide-semiconductor; noncollinear antiferromagnets; perpendicular magnetic anisotropy; topological Hall effect.

Abstract

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