Emerging electrolyte-gated transistors for neuromorphic perception

Cui Sun; Xuerong Liu; Qian Jiang; Xiaoyu Ye; Xiaojian Zhu; Run-Wei Li

doi:10.1080/14686996.2022.2162325

Emerging electrolyte-gated transistors for neuromorphic perception

Sci Technol Adv Mater. 2023 Jan 11;24(1):2162325. doi: 10.1080/14686996.2022.2162325. eCollection 2023.

Authors

Cui Sun^{1

2}, Xuerong Liu^{1

2}, Qian Jiang^{1

2

3}, Xiaoyu Ye^{1

2

3}, Xiaojian Zhu^{1

2

3}, Run-Wei Li^{1

2

3}

Affiliations

¹ CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China.
² Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China.
³ College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China.

Abstract

With the rapid development of intelligent robotics, the Internet of Things, and smart sensor technologies, great enthusiasm has been devoted to developing next-generation intelligent systems for the emulation of advanced perception functions of humans. Neuromorphic devices, capable of emulating the learning, memory, analysis, and recognition functions of biological neural systems, offer solutions to intelligently process sensory information. As one of the most important neuromorphic devices, Electrolyte-gated transistors (EGTs) have shown great promise in implementing various vital neural functions and good compatibility with sensors. This review introduces the materials, operating principle, and performances of EGTs, followed by discussing the recent progress of EGTs for synapse and neuron emulation. Integrating EGTs with sensors that faithfully emulate diverse perception functions of humans such as tactile and visual perception is discussed. The challenges of EGTs for further development are given.

Keywords: Electrolyte-gated transistors; artificial neuron; artificial synapse; int elligent perception; neuromorphic devices.

Publication types

Review

Grants and funding

This work was supported by National Key Research and Development Project [2021YFA1202600], National Natural Science Foundation of China [92064011, 62174164, 61974179, 61841404, 61674153], Youth Innovation Promotion Association of the CAS [2020297], Natural Science Foundation of Zhejiang Province [LR17E020001], Key Research and Development Project of Zhejiang Province [2021C01039], The Instrument Developing Project of the Chinese Academy of Sciences [YJKYYQ20200030], Ningbo Natural Science Foundation [202003N4029] and C. Wong Education Foundation [GJTD-2020-11].