The two photon absorption-transient current technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and discussed using a passive strip CMOS detector and a standard strip detector as an example. The influence of laser beam clipping and reflection is shown, and a method that allows to compensate these intensity-related effects for investigation of the electric field is introduced and successfully employed. Additionally, the mirror technique is introduced, which exploits reflection at a metallised back side to enable the measurement directly below a top metallisation while illuminating from the top.
Keywords: silicon detectors; solid state detectors; transient current technique; two photon absorption-transient current technique.