In this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control software for controlling each module was developed. The control module includes the mechanical, control, and ultrasonic parts. The activation module was composed of the pulser/receiver, and the data acquisition system included an A/D board. In addition, the integrated control software performs system operation and material measurement and includes an analysis program to analyze the obtained A-Scan signals in various ways. A through-silicon via (TSV) device, which is a semiconductor structure, was prepared to verify the performance of the developed system. The TSV device was analyzed using an ultra-high-resolution acoustic microscope. When the C-Scan images were analyzed, void defects with a size of 20 μm were detected at a depth of approximately 32.5 μm. A similar result could be confirmed when the cross section was measured using focused ion beam (FIB) microscopy.
Keywords: TSV device; acoustic microscopy system; internal defect; semiconductor.