The ongoing discoveries and studies of novel topological quantum materials have become an emergent and important field of condensed matter physics. Recently, HfTe5 ignited renewed interest as a candidate of a novel topological material. The single-layer HfTe5 is predicted to be a two-dimensional large band gap topological insulator and can be stacked into a bulk that may host a temperature-driven topological phase transition. Historically, HfTe5 attracted considerable interest for its anomalous transport properties characterized by a peculiar resistivity peak accompanied by a sign reversal carrier type. The origin of the transport anomaly remains under a hot debate. Here we report the first high-resolution laser-based angle-resolved photoemission measurements on the temperature-dependent electronic structure in HfTe5. Our results indicated that a temperature-induced Lifshitz transition occurs in HfTe5, which provides a natural understanding on the origin of the transport anomaly in HfTe5. In addition, our observations suggest that HfTe5 is a weak topological insulator that is located at the phase boundary between weak and strong topological insulators at very low temperature.
Keywords: Angle-resolved photoemission spectroscopy (ARPES); HfTe(5); Lifshitz transition; Topological insulators; ZrTe(5).
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