C-V characteristics of piezotronic metal-insulator-semiconductor transistor

Jiayang Zheng; Yongli Zhou; Yaming Zhang; Lijie Li; Yan Zhang

doi:10.1016/j.scib.2019.11.001

C-V characteristics of piezotronic metal-insulator-semiconductor transistor

Sci Bull (Beijing). 2020 Jan 30;65(2):161-168. doi: 10.1016/j.scib.2019.11.001. Epub 2019 Nov 5.

Authors

Jiayang Zheng¹, Yongli Zhou², Yaming Zhang³, Lijie Li⁴, Yan Zhang⁵

Affiliations

¹ School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; Department of Computer Science, University of Rochester, Rochester, NY 14627, USA.
² Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
³ School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China.
⁴ Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN, UK. Electronic address: L.Li@swansea.ac.uk.
⁵ School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China. Electronic address: zhangyan@uestc.edu.cn.

PMID: 36659080
DOI: 10.1016/j.scib.2019.11.001

Abstract

Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices.

Keywords: Capacitance-voltage (C-V) characteristics; Distribution width of strain-induced piezoelectric charges; Metal-insulator-semiconductor; Piezotronic effect.