Although Technology Computer-Aided Design (TCAD) simulation has paved a successful and efficient way to significantly reduce the cost of experiments under the device design, it still encounters many challenges as the semiconductor industry goes through rapid development in recent years, i.e. Complex 3D device structures, power devices. Recently, although machine learning has been proposed to enable the simulation acceleration and inverse‑design of devices, which can quickly and accurately predict device performance, up to now physical quantities (such as electric field, potential energy, quantum-mechanically confined carrier distributions, and so on) being essential for understanding device physics can still only be obtained by traditional time-consuming self-consistent calculation. In this work, we employ a modified U-Net and train the models to predict the physical quantities of a MOSFET in two-dimensional landscapes for the first time. Errors in predictions by the two models have been analyzed, which shows the importance of a sufficient amount of data to prediction accuracy. The computation time for one landscape prediction with high accuracy by our well-trained U-Net model is much faster than the traditional approach. This work paves the way for interpretable predictions of device simulations based on convolutional neural networks.
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