Quantum prospects for hybrid thin-film lithium niobate on silicon photonics

Front Optoelectron. 2022 Apr 11;15(1):7. doi: 10.1007/s12200-022-00006-7.

Abstract

Photonics is poised to play a unique role in quantum technology for computation, communications and sensing. Meanwhile, integrated photonic circuits-with their intrinsic phase stability and high-performance, nanoscale components-offer a route to scaling. However, each integrated platform has a unique set of advantages and pitfalls, which can limit their power. So far, the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics. However, thin-film lithium niobate (TFLN) is emerging as a powerful platform with unique capabilities; advances in fabrication have yielded loss metrics competitive with any integrated photonics platform, while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation. In this short review, we explore the prospects of dynamic quantum circuits-such as multiplexed photon sources and entanglement generation-on hybrid TFLN on silicon (TFLN/Si) photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.

Keywords: Lithium niobate (LN); Quantum communications; Quantum information; Quantum photonics; Silicon photonics.

Publication types

  • Review