Study of the influence of gamma irradiation on internal friction in dislocation silicon

Ulugbek Ashrapov; Shermahmat Makhkamov; Ilkham Sadikov; Mannab Tashmetov; Muzaffar Erdonov

doi:10.1016/j.apradiso.2022.110623

Study of the influence of gamma irradiation on internal friction in dislocation silicon

Appl Radiat Isot. 2023 Mar:193:110623. doi: 10.1016/j.apradiso.2022.110623. Epub 2022 Dec 21.

Authors

Ulugbek Ashrapov¹, Shermahmat Makhkamov², Ilkham Sadikov³, Mannab Tashmetov², Muzaffar Erdonov²

Affiliations

¹ Department of Nuclear Energy and Nuclear Technologies of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan. Electronic address: ashrapov@inp.uz.
² Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan.
³ Department of Nuclear Energy and Nuclear Technologies of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan.

PMID: 36630782
DOI: 10.1016/j.apradiso.2022.110623

Abstract

The effect of radiation defects formed during gamma irradiation of single-crystal silicon on the internal friction in dislocations was studied. It was found that in dislocation silicon, after irradiation with gamma rays of a source of ionizing radiation ⁶⁰Co, at first the internal friction (Q^-1) increases to a maximum value and then Q^-1 gradually decreases to the initial values. It is shown that, as a result of gamma irradiation of silicon, the resulting change in Q^-1 is associated with the process of relaxation of vacancies with the formation of vacancy defect complexes near dislocation lines. The data of the acoustic emission method (obtained AE spectra) confirm that AE signals in gamma-irradiated silicon arise due to moving dislocations, and the intensity of AE signals initially increases during the first 1.5-2 h, which is also observed with an increase in internal friction depending on Q^-1(t), and then the AE signals decrease in the form of pulses of discrete AE signals.

Keywords: Acoustic emission signals; Annihilation; Dislocation; Gamma irradiation; Internal friction; Monocrystalline silicon; Radiation defects; Source cobalt-60.