Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector

Xinke Liu; Jiangchuan Wang; Yuheng Lin; Jie Zhou; Qiang Liu; Wenjie Yu; Yongqing Cai; Xiaohua Li; V Divakar Botcha; Tingke Rao; Shuangwu Huang

doi:10.1021/acsomega.2c06480

Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector

ACS Omega. 2022 Dec 13;7(51):48301-48309. doi: 10.1021/acsomega.2c06480. eCollection 2022 Dec 27.

Authors

Affiliations

¹ College of Materials Science and Engineering, College of Electronic and Information Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People's Republic of China.
² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai200050, People's Republic of China.
³ Joint Key Laboratory of Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau999078, China.

Abstract

Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light-mass interaction. Currently, graphene and transition-metal dichalcogenides (TMDCs) are the most attractive active materials for constructing photodetectors. A growing number of emerging TMDCs applied in photodetectors bring up opportunities in the direct band gap independence with thickness. This study demonstrated for the first time a photodetector based on a few-layer Re _x Mo_1-x S₂, which was grown by chemical vapor deposition (CVD) under atmospheric pressure. The detailed material characterizations were performed using Raman spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy (XPS) on an as-grown few-layer Re _x Mo_1-x S₂. The results show that both MoS₂ and ReS₂ peaks appear in the Re _x Mo_1-x S₂ Raman diagram. Re _x Mo_1-x S₂ is observed to emit light at a wavelength of 716.8 nm. The electronic band structure of the few layers of Re _x Mo_1-x S₂ calculated using the first-principles theory suggests that the band gap of Re _x Mo_1-x S₂ is larger than that of ReS₂ and smaller than that of MoS₂, which is consistent with the photoluminescence results. The thermal stability of the few layers of Re _x Mo_1-x S₂ was evaluated using Raman temperature measurements. It is found that the thermal stability of Re _x Mo_1-x S₂ is close to those of pure ReS₂ and MoS₂. The fabricated Re _x Mo_1-x S₂ photodetector shows a high response rate of 7.46 A W^-1 under 365 nm illumination, offering a competitive performance to the devices based on TMDCs and graphenes. This study unambiguously distinguishes Re _x Mo_1-x S₂ as a future candidate in electronics and optoelectronics.