Stacked printed MoS2 and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors

Thi Thu Thuy Can; Woon-Seop Choi

doi:10.1038/s41598-022-27072-3

Stacked printed MoS₂ and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors

Sci Rep. 2022 Dec 28;12(1):22469. doi: 10.1038/s41598-022-27072-3.

Authors

Thi Thu Thuy Can^{1

2}, Woon-Seop Choi³

Affiliations

¹ School of Electronics and Display Engineering, Hoseo University, Asan, 31499, Korea.
² Faculty of Physics, Hanoi National University of Education, Hanoi, Vietnam.
³ School of Electronics and Display Engineering, Hoseo University, Asan, 31499, Korea. wschoi@hoseo.edu.

Abstract

Transition metal dichalcogenide-based thin-film transistors (TFTs) have drawn intense research attention, but they suffer from high cost of materials and complex methods. Directly printed transistors have been in the limelight due to low cost and an environmentally friendly technique. An electrohydrodynamic (EHD) jet printing technique was employed to pattern both MoS₂ active layer and Ag source and drain (S/D) electrodes. Printed MoS₂ lines were patterned on a silicon wafer using a precursor solution and simple annealing, and the patterns were transferred on other SiO₂ substrates for TFT fabrication. On top of the patterned MoS₂, Ag paste was also patterned for S/D electrodes using EHD jet printing. The printed TFTs had a high on-off current ratio exceeding 10⁵, low subthreshold slope, and better hysteresis behavior after transferring MoS₂ patterns. This result could be important for practical TFT applications and could be extended to other 2D materials.