AC-driven multicolor electroluminescence from a hybrid WSe2 monolayer/AlGaInP quantum well light-emitting device

Ya-Hui Chang; Yen-Shou Lin; Konthoujam James Singh; Hsiang-Ting Lin; Chiao-Yun Chang; Zheng-Zhe Chen; Yu-Wei Zhang; Shih-Yen Lin; Hao-Chung Kuo; Min-Hsiung Shih

doi:10.1039/d2nr03725d

AC-driven multicolor electroluminescence from a hybrid WSe₂ monolayer/AlGaInP quantum well light-emitting device

Nanoscale. 2023 Jan 19;15(3):1347-1356. doi: 10.1039/d2nr03725d.

Authors

Ya-Hui Chang^{1

2}, Yen-Shou Lin^{1

2}, Konthoujam James Singh², Hsiang-Ting Lin¹, Chiao-Yun Chang^{1

3}, Zheng-Zhe Chen^{1

4}, Yu-Wei Zhang^{1

5}, Shih-Yen Lin^{1

5}, Hao-Chung Kuo^{1

2}, Min-Hsiung Shih^{1

2

6}

Affiliations

¹ Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan. mhshih@gate.sinica.edu.tw.
² Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
³ Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202301, Taiwan.
⁴ Department of Physics, National Taiwan University, Taipei, Taiwan, Taipei 10617, Taiwan.
⁵ Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan.
⁶ Department of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.

PMID: 36562246
DOI: 10.1039/d2nr03725d

Abstract

Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe₂ monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe₂ monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe₂ monolayer was observed to boost the WSe₂ monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe₂ monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.