Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction

Chao Zang; Bo Li; Yun Sun; Shun Feng; Xin-Zhe Wang; Xiaohui Wang; Dong-Ming Sun

doi:10.1039/d2na00281g

Uniform self-rectifying resistive random-access memory based on an MXene-TiO₂ Schottky junction

Nanoscale Adv. 2022 Oct 11;4(23):5062-5069. doi: 10.1039/d2na00281g. eCollection 2022 Nov 22.

Authors

Chao Zang^{1

2}, Bo Li^{1

2}, Yun Sun^{1

2}, Shun Feng^{1

3}, Xin-Zhe Wang^{1

2}, Xiaohui Wang^{1

2}, Dong-Ming Sun^{1

2}

Affiliations

¹ Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China yunsun@imr.ac.cn wang@imr.ac.cn dmsun@imr.ac.cn.
² School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China.
³ School of Physical Science and Technology, ShanghaiTech University 393 Huaxiazhong Road Shanghai 200031 China.

Abstract

For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO₂ Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO₂ interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO₂ and TiO₂-Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 10³, which offers great potential for large-scale RRAM applications based on MXene materials.