Large-Scale MoS2 Pixel Array for Imaging Sensor

Nanomaterials (Basel). 2022 Nov 22;12(23):4118. doi: 10.3390/nano12234118.

Abstract

Two-dimensional molybdenum disulfide (MoS2) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS2 phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS2 flakes, which is laboratory- feasible but not practical for the future industrial fabrication of large-scale pixel arrays. Recently, wafer-scale MoS2 growth has been rapidly developed, but few results of uniform large-scale photoelectric devices were reported. Here, we designed a 12 × 12 pixels pixel array image sensor fabricated on a 2 cm × 2 cm monolayer MoS2 film grown by chemical vapor deposition (CVD). The photogating effect induced by the formation of trap states ensures a high photoresponsivity of 364 AW-1, which is considerably superior to traditional CMOS sensors (≈0.1 AW-1). Experimental results also show highly uniform photoelectric properties in this array. Finally, the concatenated image obtained by laser lighting stencil and photolithography mask demonstrates the promising potential of 2D MoS2 for future optoelectrical applications.

Keywords: molybdenum disulfide (MoS2); photo sensor; two-dimensional (2D) semiconductors.

Grants and funding

This research was funded by the National Key Research and Development Program (Grant No. 2021YFA1200500), in part by the Innovation Program of Shanghai Municipal Education Commission (Grant No. 2021-01-07-00-07-E00077), and Shanghai Municipal Science and Technology Commission (Grant No. 21DZ1100900). We also thank the support of the young scientist project from the MOE innovation platform.