Solid-state wafers are indispensable components in material science as substrates for epitaxial homo- or heterostructures or carriers for two-dimensional materials. However, reliable determination of magnetic properties of nanomaterials in volume magnetometry is frequently affected by unexpectedly rich magnetism of these substrates, including significant magnetic anisotropy. Here, we describe a simplified experimental routine of magnetic anisotropy assessment, which we exemplify and validate for epi-ready sapphire wafers from various sources. Both the strength and the sign of magnetic anisotropy are obtained from carefully designed temperature-dependent measurements, which mitigate all known pitfalls of volume SQUID magnetometry and are substantially faster than traditional approaches. Our measurements indicate that in all the samples, two types of net paramagnetic contributions coexist with diamagnetism. The first one can be as strong as 10% of the base diamagnetism of sapphire [-3.7(1) × 10-7 emu/gOe], and when exceeds 2%, it exhibits pronounced magnetic anisotropy, with the easy axis oriented perpendicularly to the face of c-plane wafers. The other is much weaker, but exhibits a ferromagnetic-like appearance. These findings form an important message that nonstandard magnetism of common substrates can significantly influence the results of precise magnetometry of nanoscale materials and that its existence must be taken for granted by both industry and academia.
Keywords: 2D magnetism; SQUID magnetometry; dilute magnetic semiconductors; magnetic anisotropy of sapphire; magnetic characterization; nanomaterials; sapphire; semiconductor substrates; thin magnetic layers.