Perovskite interfaces critically influence the final performance of the photovoltaic devices. Optimizing them by reducing the defect densities or improving the contact with the charge transporting material is key to further enhance the efficiency and stability of perovskite solar cells. Inverted (p-i-n) devices can particularly benefit here, as evident from various successful attempts. However, every reported strategy is adapted to specific cell structures and compositions, affecting their robustness and applicability by other researchers. In this work, we present the universality of perovskite top surface post-treatment with ethylenediammonium diiodide (EDAI2) for p-i-n devices. To prove it, we compare devices bearing perovskite films of different composition, i.e., Sn-, Pb-, and mixed Sn-Pb-based devices, achieving efficiencies of up to 11.4, 22.0, and 22.9%, respectively. A careful optimization of the EDAI2 thickness indicates a different tolerance for Pb- and Sn-based devices. The main benefit of this treatment is evident in the open-circuit voltage, with enhancements of up to 200 mV for some compositions. In addition, we prove that this treatment can be successfully applied by both wet (spin-coating) and dry (thermal evaporation) methods, regardless of the composition. The versatility of this treatment makes it highly appealing for industrial application, as it can be easily adapted to specific processing requirements. We present a detailed experimental protocol, aiming to provide the community with an easy, universal perovskite post-treatment method for reliably improving the device efficiency, highlighting the potential of interfaces for the field.
Keywords: ammonium treatment; interface engineering; lead-free; perovskite; solar cell.