Wide-bandgap inorganic cesium lead halide CsPbIBr2 is a popular optoelectronic material that researchers are interested in because of the character that balances the power conversion efficiency and stability of solar cells. It also has great potential in semitransparent solar cells, indoor photovoltaics, and as a subcell for tandem solar cells. Although CsPbIBr2 -based devices have achieved good performance, the open-circuit voltage (Voc ) of CsPbIBr2 -based perovskite solar cells (PSCs) is still lower, and it is critical to further reduce large energy losses (Eloss ). Herein, a strategy is proposed for achieving surface p-type doping for CsPbIBr2 -based perovskite for the first time, using 1,5-Diaminopentane dihydroiodide at the perovskite surface to improve hole extraction efficiency. Meanwhile, the adjusted energy levels reduce Eloss and improve Voc of the CsPbIBr2 PSCs. Furthermore, the Cs- and Br-vacancies at the interface are filled, reducing structural disorder and defect states and thus improving the quality of the perovskite film. As a result, the target device achieves a high efficiency of 11.02% with a Voc of 1.33 V, which is among the best values. In addition to the improved performance, the stability of the target device under various conditions is enhanced, and the lead leakage is effectively suppressed.
Keywords: CsPbIBr 2; high efficiency; lead leakage; solar cells; stability; surface p-doping.
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