New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

Mingxu Wang; Xinming Zhuang; Fengjing Liu; Yang Chen; Zixu Sa; Yanxue Yin; Zengtao Lv; Haoming Wei; Kepeng Song; Bingqiang Cao; Zai-Xing Yang

doi:10.1021/acs.nanolett.2c04013

New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

Nano Lett. 2022 Dec 14;22(23):9707-9713. doi: 10.1021/acs.nanolett.2c04013. Epub 2022 Nov 29.

Authors

Mingxu Wang¹, Xinming Zhuang¹, Fengjing Liu¹, Yang Chen², Zixu Sa¹, Yanxue Yin¹, Zengtao Lv^{1

3}, Haoming Wei², Kepeng Song¹, Bingqiang Cao^{2

4}, Zai-Xing Yang¹

Affiliations

¹ School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China.
² School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China.
³ School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China.
⁴ Materials Research Center for Energy and Photoelectrochemical Conversion, School of Material Science and Engineering, University of Jinan, Jinan250022, China.

PMID: 36445059
DOI: 10.1021/acs.nanolett.2c04013

Abstract

Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10^-1 V, a responsivity of 7.86 × 10¹² V W^-1, and a detectivity of 5.87 × 10¹³ Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.

Keywords: GeS nanowires; photodetectors; power consumption; source-gated transistors; working mechanism.