Optimization of the Selenization Temperature on the Mn-Substituted Cu2ZnSn(S,Se)4 Thin Films and Its Impact on the Performance of Solar Cells

Zhanwu Wang; Yingrui Sui; Meiling Ma; Tianyue Wang

doi:10.3390/nano12223994

Optimization of the Selenization Temperature on the Mn-Substituted Cu₂ZnSn(S,Se)₄ Thin Films and Its Impact on the Performance of Solar Cells

Nanomaterials (Basel). 2022 Nov 12;12(22):3994. doi: 10.3390/nano12223994.

Authors

Zhanwu Wang¹, Yingrui Sui², Meiling Ma², Tianyue Wang²

Affiliations

¹ Department of Life Sciences, Jilin Normal University, Siping 136000, China.
² Key Laboratory of Functional Materials Physics and Chemistry of Ministry of Education, Jilin Normal University, Changchun 130103, China.

Abstract

Cu₂ZnSn(S,Se)₄ (CZTSSe) films are considered to be promising materials in the advancement of thin-film solar cells. In such films, the amounts of S and Se control the bandgap. Therefore, it is crucial to control the concentration of S/Se to improve efficiency. In this study, Cu₂Mn_xZn_1-xSnS₄ (CMZTS) films were fabricated using the sol-gel method and treated in a Se environment. The films were post-annealed in a Se atmosphere at various temperature ranges from 300 °C to 550 °C at intervals of 200 °C for 15 min to obtain Cu₂Mn_xZn_1-xSn(S,Se)₄ (CMZTSSe). The elemental properties, surface morphology, and electro-optical properties of the CMZTSSe films were investigated in detail. The bandgap of the CMZTSSe films was adjustable in the scope of 1.11-1.22 eV. The structural propeties and phase purity of the CMZTSSe films were analyzed by X-ray diffraction and Raman analysis. High-quality CMZTSSe films with large grains could be acquired by suitably changing the selenization temperature. Under the optimized selenization conditions, the efficiency of the fabricated CMZTSSe device reached 3.08%.

Keywords: Cu2ZnSn(S,Se)4 film; Mn-doping; properties; selenization temperature; solar cells.

Grants and funding

This research was funded by the Program for the development of Science and Technology of Jilin province Grant Nos. 20210101410JC.