A metal-insulator-metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for a crossbar array, which can lead to high-density integration of advanced memory devices. Both threshold switching and rectifying behavior were achieved based on sensitive control of the filament size. Conduction mechanism analyses demonstrated that the rectifying behavior resulted from the Schottky barrier at the interface. From the threshold switching, including the rectifying behavior, the available crossbar array size is 105-times larger.
Keywords: memory switching device; self-rectifying characteristics; threshold switching device; transparent device.