In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and destruction of conductive filaments but shows gradual switching characteristics with the p-type Si electrode according to the amount of generated oxygen vacancy. The electrical characteristics and conduction mechanisms of the device are analyzed using an energy band diagram and experimentally verified with random telegraph noise characteristics confirming the trap effects on the device conduction.
Keywords: InGaZnO; conduction mechanism; gradual and abrupt switching; memristor; oxygen vacancy; random telegraph noise.