The uniformity of magnetron-sputtered films can be evaluated using an analytical model whose key parameters, such as included angle cosine and distance between infinitesimal elements, are so far calculated based on targets-substrate geometric relation. This existing computation scheme is not applicable in a triple-target magnetron co-sputtering system with complex targets-substrate geometric relation. In this work, a computation method was proposed to calculate the deposition uniformity of a triple-target magnetron co-sputtering system based on the analytical model. In this method, the coordinates of the infinitesimal elements on the substrate and targets were calibrated in an identical global coordinate system via coordinate transformation, such that the key parameters of the analytical formula can be evaluated by vector computation. The effects of the target-substrate angle and target-substrate distance on the deposition uniformity of a given triple-target magnetron co-sputtering system were investigated via numerical simulation and experiment, respectively. Simulation results were consistent with experimental results. Relevant evolution mechanisms of the deposition uniformity of the co-sputtering system with the variations of target-substrate parameters were discussed in detail based on the simulation results. It is expected that this computation approach can be employed to provide theoretical guidance for the fast and economical fabrication of high-quality, large-area film and composite films.
Keywords: film thickness uniformity; multi-targets magnetron co-sputtering system; numerical simulation; target-substrate angle; target-substrate distance.