In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) of the order of 105 at zero bias and >105 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10-14 and 1.03 × 10-16 W/Hz1/2 and ultrahigh detectivity of 5.51 × 1011 and 3.10 × 1014 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV-visible (260:500 nm) rejection ratios of the order of 103 at zero bias and 105 at 5 V are obtained. These results demonstrate the potential of Ga2O3-based DUV PDs for solar-blind detection applications that require high-temperature robustness.
Keywords: Ga2O3; MOCVD; PDCR; detectivity; responsivity; self-powered; solar-blind photodetector; ultrawide-band-gap semiconductor.