Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Joost Romijn; Sten Vollebregt; Luke M Middelburg; Brahim El Mansouri; Henk W van Zeijl; Alexander May; Tobias Erlbacher; Johan Leijtens; Guoqi Zhang; Pasqualina M Sarro

doi:10.1038/s41378-022-00446-3

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Microsyst Nanoeng. 2022 Oct 25:8:114. doi: 10.1038/s41378-022-00446-3. eCollection 2022.

Affiliations

¹ Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, Delft, The Netherlands.
² Fraunhofer Institute for Integrated Systems and Devices Technology IISB, Erlangen, Germany.
³ Lens R&D, Noordwijk, The Netherlands.

Abstract

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm² chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

Keywords: Electrical and electronic engineering; Optical sensors.