In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems.
Keywords: Artificial synapses; Gate-all-around field-effect transistor; InAs nanowires; Synapse function.
© 2022. The Author(s).