Comprehensive Insight into p-Type Bi2Te3-Based Thermoelectrics near Room Temperature

Qing Shi; Juan Li; Xuanwei Zhao; Yiyuan Chen; Fujie Zhang; Yan Zhong; Ran Ang

doi:10.1021/acsami.2c13109

Comprehensive Insight into p-Type Bi₂Te₃-Based Thermoelectrics near Room Temperature

ACS Appl Mater Interfaces. 2022 Oct 27. doi: 10.1021/acsami.2c13109. Online ahead of print.

Authors

Qing Shi¹, Juan Li², Xuanwei Zhao¹, Yiyuan Chen¹, Fujie Zhang¹, Yan Zhong¹, Ran Ang^{1

3}

Affiliations

¹ Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China.
² Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen518055, China.
³ Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu610065, China.

PMID: 36301226
DOI: 10.1021/acsami.2c13109

Abstract

Bi₂Te₃ is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi₂Te₃-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in high-performance p-type (Bi, Sb)₂Te₃ alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)₂Te₃ thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi₂Te₃-based and other thermoelectrics.

Keywords: electrical transport; lattice thermal conductivity; microstructural defects; p-type Bi2Te3-based alloys; thermoelectricity; topological insulators.

Publication types

Review