In this work, a novel design of ArcTFET based on Charge-Plasma and Gate-Stack (CP-GS-ArcTFET) is proposed for the first time. The precise detection of breast cancer biomarker (C-erbB-2) through serum should not be limited by HEMT devices but should be explored with other novel devices also. In this regard, investigation in above-mentioned device is carried out for the detection of C-erbB-2 protein. In CP-GS-ArcTFET, various central angles ( θ ) are considered for observing the electrical parameters e.g., drain current ( [Formula: see text]), threshold voltage ( [Formula: see text]), and subthreshold slope (SS). The transconductance ( [Formula: see text]), its derivatives ( [Formula: see text] and [Formula: see text]), and analog performance indicators such as cut-off-frequency ( [Formula: see text]), gain-bandwidth-product (GBP), intrinsic-device-delay ( τ ), and transconductance-frequency-product (TFP) have also been analysed for these [Formula: see text]. The drain current, SS, and [Formula: see text] has been improved with the central angles. In the proposed device, the concept of charge equivalence of C-erbB-2 with its quantities (in [Formula: see text]/ml) is used for analysing sensitivity in Silvaco ATLAS TCAD. The device sensing is observed by changing C-erbB-2 concentrations in serum. The sensitivity concerning ON-current, OFF-current and current-ratio has been addressed for healthy and diseased individuals. The impact of θ on sensitivity is also observed. With increasing θ , the sensitivities [Formula: see text] and [Formula: see text] decrease; whereas, the sensitivity [Formula: see text] increases for the C-erbB-2 concentration of [Formula: see text]/ml. The [Formula: see text] and SS in CP-GS-ArcTFET are 4.5 ×109 and 35.97 mV/decade, respectively. The capability of CP-GS-ArcTFET to boost the performance is established with the decrease in leakage, enhancing [Formula: see text], steeper SS with the aids of [Formula: see text] reduction.