Due to the difficulty of controlling the waveguide loss in the doping region, high-speed silicon micro-ring modulators usually have limited extinction ratio. In this work, we present a mode-division-multiplexing (MDM) resonance-enhanced silicon micro-ring modulator with an ultrahigh extinction ratio. We used a two-mode micro-ring resonator and a mode conversion circular structure to trap the light twice within a single micro-ring resonator. Proof-of-concept high extinction ratio up to 55 dB was obtained. 30 Gb/s PAM-8 and 50 Gb/s PAM-4 signaling with a bit error rate below the hard-decision forward error correction (HD-FEC) threshold were demonstrated with the fabricated modulator, indicating great potential for high-order pulse amplitude modulation (PAM).