Surface emitting lasers are attractive light sources for silicon integrated photonic circuits. High speed direct operation is of great importance for these lasers in high capacity and low cost on-chip communication system. Here, we demonstrate a 1.3 µm surface emitting ridge-waveguide distributed feedback (DFB) laser with second order grating and λ/4 phase shift grating, which can achieve a 24 Gb/s operation over a wide temperature. The fabricated lasers can achieve low threshold current as 6.8 mA, and 12.5 mA at 20, and 70°C, respectively. Stable single mode operation has been observed with high side mode suppression ratio (SMSR) > 40 dB at all temperatures (20-70 °C). Meanwhile, the surface emitting optical power can reach 1.7 mW at high temperature as 70 °C. 3 dB bandwidth of small signal response is 21 GHz and 12 GHz at 20 °C and 70 °C respectively. The far-field divergence angle of surface emitting beam is 13.4°×20.2° of 10 µm length second order grating coupler. The proposed laser may have great advantages of single mode, high speed modulation and good temperature tolerance. In addition, compared with conventional DFB lasers, the surface emitting DFB laser has no additional manufacturing process, which is simple to fabricate and easy to integrate with silicon platform.