Temperature dependence of refractive indices of Al0.9Ga0.1As and In0.53Al0.1Ga0.37As in the telecommunication spectral range

Agata Zielińska; Anna Musiał; Paweł Wyborski; Mateusz Kuniej; Tobias Heuser; Nicole Srocka; Jan Grosse; Johann Peter Reithmaier; Mohamed Benyoucef; Sven Rodt; Stephan Reitzenstein; Wojciech Rudno-Rudziński

doi:10.1364/OE.457952

Temperature dependence of refractive indices of Al_0.9Ga_0.1As and In_0.53Al_0.1Ga_0.37As in the telecommunication spectral range

Opt Express. 2022 Jun 6;30(12):20225-20240. doi: 10.1364/OE.457952.

Authors

Agata Zielińska, Anna Musiał, Paweł Wyborski, Mateusz Kuniej, Tobias Heuser, Nicole Srocka, Jan Grosse, Johann Peter Reithmaier, Mohamed Benyoucef, Sven Rodt, Stephan Reitzenstein, Wojciech Rudno-Rudziński

PMID: 36224773
DOI: 10.1364/OE.457952

Abstract

In this work, we determine the temperature dependence of refractive indices of In_0.53Al_0.1Ga_0.37As and Al_0.9Ga_0.1As semiconductor alloys at telecommunication wavelengths in the range from room temperature down to 10 K. For that, we measure the temperature-dependent reflectance of two structures: with an Al_0.9Ga_0.1As/GaAs distributed Bragg reflector (DBR) designed for 1.3 µm and with an In_0.53Al_0.1Ga_0.37As/InP DBR designed for 1.55 µm. The obtained experimental results are compared to DBR reflectivity spectra calculated within the transfer matrix method to determine refractive index values. We further show that changes due to the thermal expansion of the DBR layers are negligible for our method.