Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Ting Zhang; Xilong Xu; Baibiao Huang; Ying Dai; Liangzhi Kou; Yandong Ma

doi:10.1039/d2mh00906d

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Mater Horiz. 2023 Feb 6;10(2):483-490. doi: 10.1039/d2mh00906d.

Authors

Ting Zhang¹, Xilong Xu², Baibiao Huang¹, Ying Dai¹, Liangzhi Kou², Yandong Ma¹

Affiliations

¹ School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China. daiy60@sina.com.
² School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Garden Point Campus, Brisbane, Queensland 4001, Australia.

PMID: 36196974
DOI: 10.1039/d2mh00906d

Abstract

The layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between the Berry curvature and the layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm is rooted in topological systems, rendering such a phenomenon rather scarce. Here, through model analysis, we propose an alternative, but general, mechanism for realizing the LP-AHE in valleytronic van der Waals bilayers by interlayer sliding. The interaction between out-of-plane ferroelectricity and A-type antiferromagnetism gives rise to the layer-locked Berry curvature and thus the long-sought LP-AHE in bilayer systems. The LP-AHE can be strongly coupled with sliding ferroelectricity, rendering it ferroelectrically controllable and reversible. The mechanism is demonstrated in a series of real valleytronic materials, including bilayer VSi₂P₄, VSi₂N₄, FeCl₂, RuBr₂ and VClBr. The new mechanism and phenomena provide a significant new direction to realize the LP-AHE and explore its application in electronics.