Microelectronic current-sourcing device based on band-to-band tunneling current

Onejae Sul; Yeonghun Lee; Sangduk Kim; Minjin Kwon; Hyeonjeong Sun; Jiyoung Bang; Hyungbeen Ju; Eunsuk Choi; Seung-Beck Lee

doi:10.1088/1361-6528/ac96f7

Microelectronic current-sourcing device based on band-to-band tunneling current

Nanotechnology. 2022 Nov 4;34(3). doi: 10.1088/1361-6528/ac96f7.

Authors

Onejae Sul¹, Yeonghun Lee², Sangduk Kim², Minjin Kwon³, Hyeonjeong Sun³, Jiyoung Bang², Hyungbeen Ju², Eunsuk Choi³, Seung-Beck Lee^{1

2

3}

Affiliations

¹ Institute of Nano Science and Technology, Hanyang University, Seoul, Republic of Korea.
² Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.
³ Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.

PMID: 36191522
DOI: 10.1088/1361-6528/ac96f7

Abstract

A new stable current-sourcing transistor is developed using the band-to-band tunneling phenomenon. A heterojunction between thin film WS₂and heavily hole-doped bulk silicon converts a section of the WS₂contacting the silicon into a hole-doped WS₂inside the WS₂channel, and band-to-band tunneling occurs between the electron-doped and hole-doped WS₂. The output current is regulated by the tunneling barrier thickness. The thickness depends on the gate bias for device switching, but is less sensitive to the source bias, enabling stable output currents. The minimum line sensitivity is 2.6%, and the temperature coefficient is 1.4 × 10³ppm°C^-1. The device can be operated as a current sourcing device with an ultralow output current and power consumption.

Keywords: band-to-band tunneling; heterojunction; silicon; transistor; transition metal dichalcogenide.