Temperature dependent studies on centimeter-scale MoS2and vdW heterostructures

Ann Rose Sebastian; Md Golam Kaium; Tae-Jun Ko; Mashiyat Sumaiya Shawkat; Yeonwoong Jung; Ethan C Ahn

doi:10.1088/1361-6528/ac9416

Temperature dependent studies on centimeter-scale MoS₂and vdW heterostructures

Nanotechnology. 2022 Oct 7;33(50). doi: 10.1088/1361-6528/ac9416.

Authors

Ann Rose Sebastian¹, Md Golam Kaium², Tae-Jun Ko², Mashiyat Sumaiya Shawkat², Yeonwoong Jung², Ethan C Ahn¹

Affiliations

¹ The Department of Electrical and Computer Engineering, The University of Texas at San Antonio, One UTSA Circle, San Antonio, Texas TX-78249, United States of America.
² NanoScience Technology Center, Materials Science & Engineering, University of Central Florida, 4000 Central Florida Blvd, Orlando, Florida FL-32816, United States of America.

PMID: 36137438
DOI: 10.1088/1361-6528/ac9416

Abstract

Transition metal dichalcogenides is an emerging 2D semiconducting material group which has excellent physical properties in the ultimately scaled thickness dimension. Specifically, van der Waals heterostructures hold the great promise in further advancing both the fundamental scientific knowledge and practical technological applications of 2D materials. Although 2D materials have been extensively studied for various sensing applications, temperature sensing still remains relatively unexplored. In this work, we experimentally study the temperature-dependent Raman spectroscopy and electrical conductivity of molybdenum disulfide (MoS₂) and its heterostructures with platinum dichalcogenides (PtSe₂and PtTe₂) to explore their potential to become the next-generation temperature sensor. It is found that the MoS₂-PtX₂heterostructure shows the great promise as the high-sensitivity temperature sensor.

Keywords: 2D material; MoS2; PtSe2; PtTe2; temperature sensor; variable range hopping; vdW heterostructure.