The influence of contact metals on epitaxially grown molybdenum disulfide for electrical and optical device applications

Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin

doi:10.1088/1361-6528/ac91d6

The influence of contact metals on epitaxially grown molybdenum disulfide for electrical and optical device applications

Nanotechnology. 2022 Oct 4;33(50). doi: 10.1088/1361-6528/ac91d6.

Authors

Po-Cheng Tsai^{1

2}, Coung-Ru Yan³, Shoou-Jinn Chang^{3

4}, Shih-Yen Lin^{1

2

4}

Affiliations

¹ Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan.
² Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan.
³ Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan.
⁴ Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan.

PMID: 36103804
DOI: 10.1088/1361-6528/ac91d6

Abstract

Bottom-gate transistors with mono-layer MoS₂channels and polycrystalline antimonene source/drain contact electrodes deposited at 75 °C are fabricated. Significant performance enhancement of field-effect mobility 11.80 cm²V^-1·s^-1and >10⁶ON/OFF ratio are observed for the device. Increasing photocurrents are also observed for the MoS₂transistor under light irradiation, which is attributed to the reduced carrier recombination at the metal/2D material interfaces. The results have demonstrated that besides the matching of work function values with the 2D material channel, the crystallinity of the contact electrodes is the other important parameter for the Ohmic contact formation of 2D material devices.

Keywords: contact metal; molybdenum disulfide; transistor.