In an era of rapidly evolving artificial intelligence and 5G communications technologies, massive data storage and processing are required for the real-time operation of digital processors in conventional wearable devices. However, classical von-Neumann architecture computers are limited by bottleneck-related issues. As a solution, resistive random-access memory (RRAM) devices are being considered as next generation in-memory computing devices. Among various materials, a polydopamine (PDA) is an attractive candidate for the fabrication of wearable and flexible RRAM devices. Herein, an aluminum/PDA/aluminum structure is proposed to investigate the influence of the PDA layer on resistive switching. The resistance-switching characteristics of an Al/PDA/Al structure are investigated by changing the PDA's coating time and an on/off ratio of 2.48 × 103 is recorded. X-ray photoelectron spectroscopy reveals the presence of an Al2O3 layer in Al/PDA/Al structure, and the contents of oxygen vacancies are changed according to PDA coating time. Conductive filaments in the PDA/Al structure are confirmed by conductive atomic-force microscopy. As an application, a flexible Al/PDA/Al structure is fabricated using polyethylene terephthalate substrate and its operation is successfully confirmed. These results describe the resistive-switching characteristics, including oxygen vacancies, of Al/PDA/Al structures and provide new ways of understanding the resistive-switching mechanism of PDA-based RRAM devices.
Keywords: organic resistance random-access memory; oxygen vacancy; polydopamine; resistive switching.